WMO13N10TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 629 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 36.05 грн |
| 29+ | 13.79 грн |
| 39+ | 10.44 грн |
| 100+ | 9.25 грн |
| 113+ | 8.37 грн |
| 250+ | 8.29 грн |
| 309+ | 7.89 грн |
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Технічний опис WMO13N10TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 13A, Pulsed drain current: 52A, Power dissipation: 39W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.13Ω, Mounting: SMD, Gate charge: 4nC, Kind of package: reel; tape, Kind of channel: enhancement.