WMO13P10TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13.4A; Idm: -53.6A; 62.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.4A
Pulsed drain current: -53.6A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13.4A; Idm: -53.6A; 62.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.4A
Pulsed drain current: -53.6A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 41.48 грн |
| 21+ | 19.57 грн |
| 27+ | 14.86 грн |
| 76+ | 12.18 грн |
| 208+ | 11.48 грн |
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Технічний опис WMO13P10TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -13.4A; Idm: -53.6A; 62.5W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -13.4A, Pulsed drain current: -53.6A, Power dissipation: 62.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.17Ω, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhancement.