WMO140NV6LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 50A; Idm: 200A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 50A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 50A; Idm: 200A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 50A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 200A
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Технічний опис WMO140NV6LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 50A; Idm: 200A; 62.5W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 50A, Power dissipation: 62.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 14mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 14nC, Pulsed drain current: 200A.