WMO15N10T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 979 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 37.96 грн |
| 27+ | 14.41 грн |
| 36+ | 10.88 грн |
| 100+ | 9.66 грн |
| 102+ | 8.89 грн |
| 250+ | 8.66 грн |
| 278+ | 8.35 грн |
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Технічний опис WMO15N10T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 15A, Pulsed drain current: 60A, Power dissipation: 41.7W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 90mΩ, Mounting: SMD, Gate charge: 20.6nC, Kind of package: reel; tape, Kind of channel: enhancement.