WMO15N65C4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 86W
Gate charge: 14.6nC
Gate-source voltage: ±30V
Pulsed drain current: 26A
Drain current: 7.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 86W
Gate charge: 14.6nC
Gate-source voltage: ±30V
Pulsed drain current: 26A
Drain current: 7.8A
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Технічний опис WMO15N65C4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Case: TO252, On-state resistance: 0.3Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Power dissipation: 86W, Gate charge: 14.6nC, Gate-source voltage: ±30V, Pulsed drain current: 26A, Drain current: 7.8A.