WMO175N10HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 49.52 грн |
| 14+ | 27.59 грн |
| 25+ | 24.75 грн |
| 45+ | 20.15 грн |
| 124+ | 19.01 грн |
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Технічний опис WMO175N10HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 45A, Pulsed drain current: 180A, Power dissipation: 67.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 17.5mΩ, Mounting: SMD, Gate charge: 17nC, Kind of package: reel; tape, Kind of channel: enhancement.