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WMO18N20JN

WMO18N20JN WAYON

WMx18N20JN.pdf
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 36W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 80ns
Pulsed drain current: 39A
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Технічний опис WMO18N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 7A, Power dissipation: 36W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 135mΩ, Mounting: SMD, Gate charge: 7.2nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 80ns, Pulsed drain current: 39A.