WMO190N03TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.44 грн |
| 17+ | 25.15 грн |
| 25+ | 22.58 грн |
| 100+ | 20.02 грн |
| 250+ | 17.95 грн |
| 1000+ | 17.37 грн |
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Технічний опис WMO190N03TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 190A, Pulsed drain current: 760A, Power dissipation: 166.7W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 3mΩ, Mounting: SMD, Gate charge: 0.1µC, Kind of package: reel; tape, Kind of channel: enhancement.