WMO190N03TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 40.44 грн |
| 17+ | 22.76 грн |
| 25+ | 20.54 грн |
| 54+ | 16.63 грн |
Відгуки про товар
Написати відгук
Технічний опис WMO190N03TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 190A, Pulsed drain current: 760A, Power dissipation: 166.7W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 3mΩ, Mounting: SMD, Gate charge: 0.1µC, Kind of package: reel; tape, Kind of channel: enhancement.