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WMO190N15HG4

WMO190N15HG4 WAYON


Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 54A; Idm: 216A; 121.4W; TO252
Mounting: SMD
Pulsed drain current: 216A
Power dissipation: 121.4W
Gate charge: 24.8nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19.5mΩ
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Технічний опис WMO190N15HG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 54A; Idm: 216A; 121.4W; TO252, Mounting: SMD, Pulsed drain current: 216A, Power dissipation: 121.4W, Gate charge: 24.8nC, Polarisation: unipolar, Drain current: 54A, Kind of channel: enhancement, Drain-source voltage: 150V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: TO252, On-state resistance: 19.5mΩ.