WMO25N10T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 32.19 грн |
| 28+ | 13.87 грн |
| 31+ | 12.57 грн |
| 90+ | 10.12 грн |
| 246+ | 9.58 грн |
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Технічний опис WMO25N10T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 25A, Pulsed drain current: 100A, Power dissipation: 53.2W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 44mΩ, Mounting: SMD, Gate charge: 37.9nC, Kind of package: reel; tape, Kind of channel: enhancement.