WMO25P03TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 36.40 грн |
| 28+ | 14.15 грн |
| 37+ | 10.69 грн |
| 100+ | 9.35 грн |
| 103+ | 9.04 грн |
| 250+ | 8.41 грн |
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Технічний опис WMO25P03TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -25A, Pulsed drain current: -100A, Power dissipation: 22.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 21mΩ, Mounting: SMD, Gate charge: 20nC, Kind of package: reel; tape, Kind of channel: enhancement.