WMO30P03TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 370 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 42.81 грн |
| 23+ | 16.67 грн |
| 31+ | 12.54 грн |
| 93+ | 9.94 грн |
| 254+ | 9.40 грн |
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Технічний опис WMO30P03TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 24W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 15.5mΩ, Mounting: SMD, Gate charge: 20.5nC, Kind of package: reel; tape, Kind of channel: enhancement.