WMO30P10TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 159 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 39.79 грн |
| 18+ | 22.64 грн |
| 25+ | 20.28 грн |
| 54+ | 17.37 грн |
| 147+ | 16.43 грн |
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Технічний опис WMO30P10TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -35A, Pulsed drain current: -140A, Power dissipation: 119W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 50mΩ, Mounting: SMD, Gate charge: 115nC, Kind of package: reel; tape, Kind of channel: enhancement.