WMO35N06T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Gate charge: 14.5nC
On-state resistance: 22mΩ
Power dissipation: 44.6W
Gate-source voltage: ±20V
Pulsed drain current: 140A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Gate charge: 14.5nC
On-state resistance: 22mΩ
Power dissipation: 44.6W
Gate-source voltage: ±20V
Pulsed drain current: 140A
на замовлення 446 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 32.23 грн |
| 28+ | 14.18 грн |
| 31+ | 12.76 грн |
| 87+ | 10.63 грн |
| 239+ | 10.08 грн |
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Технічний опис WMO35N06T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO252, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 35A, Gate charge: 14.5nC, On-state resistance: 22mΩ, Power dissipation: 44.6W, Gate-source voltage: ±20V, Pulsed drain current: 140A.