WMO80N03T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 59.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 59.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 59.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 59.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 487 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 39.61 грн |
| 22+ | 17.55 грн |
| 25+ | 15.86 грн |
| 71+ | 12.72 грн |
| 194+ | 12.03 грн |
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Технічний опис WMO80N03T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 59.5W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 80A, Pulsed drain current: 320A, Power dissipation: 59.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 5mΩ, Mounting: SMD, Gate charge: 20nC, Kind of package: reel; tape, Kind of channel: enhancement.