WMO90N02T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 445 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 31.32 грн |
| 27+ | 14.78 грн |
| 36+ | 11.16 грн |
| 99+ | 9.43 грн |
| 250+ | 8.88 грн |
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Технічний опис WMO90N02T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 90A, Pulsed drain current: 222A, Power dissipation: 39W, Case: TO252, Gate-source voltage: ±10V, On-state resistance: 4.5mΩ, Mounting: SMD, Gate charge: 0.1µC, Kind of package: reel; tape, Kind of channel: enhancement.