WMO9N50D1B WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 104W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 104W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис WMO9N50D1B WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 9A, Pulsed drain current: 36A, Power dissipation: 104W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.68Ω, Mounting: SMD, Gate charge: 72nC, Kind of package: reel; tape, Kind of channel: enhancement.