WMP119N10LG2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 65.8W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 65.8W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 51.51 грн |
| 13+ | 33.16 грн |
| 25+ | 31.25 грн |
| 37+ | 25.43 грн |
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Технічний опис WMP119N10LG2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 55A, Pulsed drain current: 220A, Power dissipation: 65.8W, Case: TO251, Gate-source voltage: ±20V, On-state resistance: 13mΩ, Mounting: THT, Gate charge: 20nC, Kind of package: tube, Kind of channel: enhancement.