WMQ048NV6HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 68A; Idm: 272A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 68A; Idm: 272A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.68 грн |
| 13+ | 32.29 грн |
| 25+ | 28.99 грн |
| 38+ | 24.42 грн |
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Технічний опис WMQ048NV6HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 68A; Idm: 272A; 43W; PDFN3030-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 68A, Pulsed drain current: 272A, Power dissipation: 43W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 5.5mΩ, Mounting: SMD, Gate charge: 28.5nC, Kind of package: reel; tape, Kind of channel: enhancement.