WMQ10N10TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 39.69 грн |
| 27+ | 14.82 грн |
| 32+ | 12.39 грн |
| 94+ | 9.88 грн |
| 257+ | 9.33 грн |
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Технічний опис WMQ10N10TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 20W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 90mΩ, Mounting: SMD, Gate charge: 20.6nC, Kind of package: reel; tape, Kind of channel: enhancement.