WMQ175N10HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Pulsed drain current: 168A
Power dissipation: 65.8W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 18mΩ
Mounting: SMD
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.94 грн |
| 15+ | 28.38 грн |
| 25+ | 25.51 грн |
| 100+ | 22.64 грн |
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Технічний опис WMQ175N10HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W, Pulsed drain current: 168A, Power dissipation: 65.8W, Gate charge: 17nC, Polarisation: unipolar, Drain current: 42A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PDFN3030-8, On-state resistance: 18mΩ, Mounting: SMD.