WMQ30DN04TS WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 112A
Gate charge: 26nC
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.16 грн |
| 20+ | 21.72 грн |
| 25+ | 17.78 грн |
| 100+ | 15.77 грн |
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Технічний опис WMQ30DN04TS WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 28A, Power dissipation: 18.4W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 14.5mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 112A, Gate charge: 26nC.