WMQ30DN04TS WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 499 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 44.63 грн |
| 19+ | 21.20 грн |
| 25+ | 17.38 грн |
| 69+ | 13.71 грн |
| 188+ | 12.91 грн |
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Технічний опис WMQ30DN04TS WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 28A, Pulsed drain current: 112A, Power dissipation: 18.4W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 14.5mΩ, Mounting: SMD, Gate charge: 26nC, Kind of package: reel; tape, Kind of channel: enhancement.