WMQ30DP03TS WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -30A; Idm: -120A; 29W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -30A; Idm: -120A; 29W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 36.91 грн |
| 21+ | 19.69 грн |
| 25+ | 16.18 грн |
| 74+ | 12.75 грн |
| 202+ | 12.04 грн |
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Технічний опис WMQ30DP03TS WAYON
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -30V; -30A; Idm: -120A; 29W, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 29W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 20.5nC, Kind of package: reel; tape, Kind of channel: enhancement.