WMQ30N02T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 32.17 грн |
| 30+ | 13.13 грн |
| 36+ | 10.93 грн |
| 100+ | 10.38 грн |
| 107+ | 8.73 грн |
| 293+ | 8.25 грн |
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Технічний опис WMQ30N02T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 75A, Pulsed drain current: 300A, Power dissipation: 37.8W, Case: PDFN3030-8, Gate-source voltage: ±10V, On-state resistance: 4mΩ, Mounting: SMD, Gate charge: 43.8nC, Kind of package: reel; tape, Kind of channel: enhancement.