WMQ30N03T2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
на замовлення 481 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 38.69 грн |
| 24+ | 15.98 грн |
| 29+ | 13.30 грн |
| 88+ | 10.24 грн |
| 241+ | 9.71 грн |
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Технічний опис WMQ30N03T2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 24A, Pulsed drain current: 100A, Power dissipation: 24W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: SMD, Gate charge: 8nC, Kind of channel: enhancement.