WMQ30N04TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 18.9W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 18.9W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 37.32 грн |
| 29+ | 13.78 грн |
| 35+ | 11.58 грн |
| 100+ | 10.79 грн |
| 108+ | 8.59 грн |
| 295+ | 8.11 грн |
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Технічний опис WMQ30N04TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 30A, Pulsed drain current: 120A, Power dissipation: 18.9W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 12mΩ, Mounting: SMD, Gate charge: 26nC, Kind of package: reel; tape, Kind of channel: enhancement.