WMQ30N06TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 32.19 грн |
| 30+ | 13.18 грн |
| 35+ | 10.96 грн |
| 100+ | 10.42 грн |
| 107+ | 8.43 грн |
| 293+ | 7.97 грн |
Відгуки про товар
Написати відгук
Технічний опис WMQ30N06TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 30A, Pulsed drain current: 120A, Power dissipation: 34.7W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 22mΩ, Mounting: SMD, Gate charge: 14.5nC, Kind of package: reel; tape, Kind of channel: enhancement.