WMQ30P03T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 38.60 грн |
| 28+ | 14.11 грн |
| 33+ | 11.82 грн |
| 100+ | 11.21 грн |
| 103+ | 8.92 грн |
| 283+ | 8.39 грн |
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Технічний опис WMQ30P03T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 29.7W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.