WMQ30P04T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 34.78 грн |
| 22+ | 18.67 грн |
| 26+ | 15.28 грн |
| 77+ | 12.05 грн |
| 211+ | 11.42 грн |
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Технічний опис WMQ30P04T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 21W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 13mΩ, Mounting: SMD, Gate charge: 28nC, Kind of package: reel; tape, Kind of channel: enhancement.