WMQ50N04T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 395 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 39.69 грн |
| 22+ | 17.88 грн |
| 27+ | 15.06 грн |
| 79+ | 11.76 грн |
| 215+ | 11.14 грн |
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Технічний опис WMQ50N04T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 50A, Pulsed drain current: 200A, Power dissipation: 22.7W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 7.2mΩ, Mounting: SMD, Gate charge: 36nC, Kind of package: reel; tape, Kind of channel: enhancement.