WMQ55N04T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 485 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 32.09 грн |
| 23+ | 17.17 грн |
| 28+ | 14.19 грн |
| 78+ | 11.84 грн |
| 214+ | 11.21 грн |
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Технічний опис WMQ55N04T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 55A, Pulsed drain current: 220A, Power dissipation: 40W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 5.5mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.