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WMQ55P02T1

WMQ55P02T1 WAYON


Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W
Case: PDFN3030-8
Power dissipation: 39W
Gate charge: 43nC
Polarisation: unipolar
Drain current: -55A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 8.2mΩ
Mounting: SMD
Pulsed drain current: -220A
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Технічний опис WMQ55P02T1 WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W, Case: PDFN3030-8, Power dissipation: 39W, Gate charge: 43nC, Polarisation: unipolar, Drain current: -55A, Kind of channel: enhancement, Drain-source voltage: -20V, Type of transistor: P-MOSFET, Gate-source voltage: ±10V, Kind of package: reel; tape, On-state resistance: 8.2mΩ, Mounting: SMD, Pulsed drain current: -220A.