WMR10N03T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.01 грн |
| 32+ | 12.34 грн |
| 38+ | 10.38 грн |
| 100+ | 9.83 грн |
| 114+ | 8.10 грн |
| 314+ | 7.62 грн |
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Технічний опис WMR10N03T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 8A, Pulsed drain current: 40A, Power dissipation: 26.6W, Case: DFN2020-6, Gate-source voltage: ±20V, On-state resistance: 16.5mΩ, Mounting: SMD, Gate charge: 9.9nC, Kind of channel: enhancement.