WMR12P02T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.27 грн |
| 35+ | 11.91 грн |
| 50+ | 8.27 грн |
| 100+ | 7.45 грн |
| 500+ | 6.54 грн |
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Технічний опис WMR12P02T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -11.5A, Pulsed drain current: -46A, Power dissipation: 3.1W, Case: DFN2020-6, Gate-source voltage: ±12V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 12nC, Kind of package: reel; tape, Kind of channel: enhancement.