WMR12P02T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 32.09 грн |
| 36+ | 11.14 грн |
| 51+ | 7.72 грн |
| 100+ | 6.96 грн |
| 157+ | 5.91 грн |
| 430+ | 5.59 грн |
| 500+ | 5.58 грн |
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Технічний опис WMR12P02T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -11.5A, Pulsed drain current: -46A, Power dissipation: 3.1W, Case: DFN2020-6, Gate-source voltage: ±12V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 12nC, Kind of package: reel; tape, Kind of channel: enhancement.