WMR140NV6LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 30.47 грн |
| 35+ | 11.24 грн |
| 42+ | 9.43 грн |
| 100+ | 8.88 грн |
| 128+ | 7.23 грн |
| 351+ | 6.84 грн |
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Технічний опис WMR140NV6LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 9A, Pulsed drain current: 36A, Power dissipation: 2.1W, Case: DFN2020-6, Gate-source voltage: ±20V, On-state resistance: 14.5mΩ, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Kind of channel: enhancement.