
WMS02P15TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
14+ | 31.32 грн |
27+ | 14.86 грн |
33+ | 12.26 грн |
92+ | 10.06 грн |
251+ | 9.51 грн |
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Технічний опис WMS02P15TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -150V, Drain current: -1.5A, Pulsed drain current: -6A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 0.85Ω, Mounting: SMD, Gate charge: 9.6nC, Kind of package: reel; tape, Kind of channel: enhancement.