WMS048NV6LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 74A
Drain-source voltage: 65V
Drain current: 18.5A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 74A
Drain-source voltage: 65V
Drain current: 18.5A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.77 грн |
| 12+ | 32.49 грн |
| 25+ | 29.12 грн |
| 38+ | 23.68 грн |
Відгуки про товар
Написати відгук
Технічний опис WMS048NV6LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8, Case: SOP8, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 3.1W, Polarisation: unipolar, Gate charge: 35nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 74A, Drain-source voltage: 65V, Drain current: 18.5A, On-state resistance: 5.6mΩ, Type of transistor: N-MOSFET.