WMS04N10T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 38.09 грн |
| 32+ | 12.50 грн |
| 40+ | 9.98 грн |
| 100+ | 9.43 грн |
| 116+ | 7.94 грн |
| 319+ | 7.55 грн |
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Технічний опис WMS04N10T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 0.1Ω, Mounting: SMD, Gate charge: 12nC, Kind of package: reel; tape, Kind of channel: enhancement.