
WMS06P04T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
13+ | 33.86 грн |
35+ | 11.24 грн |
44+ | 8.96 грн |
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Технічний опис WMS06P04T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 3W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -6A, Pulsed drain current: -24A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 45mΩ, Mounting: SMD, Gate charge: 17nC, Kind of package: reel; tape, Kind of channel: enhancement.