WMS08P03T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.84 грн |
| 33+ | 11.88 грн |
| 46+ | 8.35 грн |
| 100+ | 7.51 грн |
| 147+ | 6.13 грн |
| 404+ | 5.75 грн |
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Технічний опис WMS08P03T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8, Case: SOP8, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 2.7W, Polarisation: unipolar, Gate charge: 20nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: -40A, Drain-source voltage: -30V, Drain current: -8A, On-state resistance: 20mΩ, Type of transistor: P-MOSFET.