WMS08P04TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8A; Idm: -32A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8A; Idm: -32A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 28.32 грн |
| 38+ | 10.68 грн |
| 45+ | 8.93 грн |
| 100+ | 8.37 грн |
| 134+ | 7.01 грн |
| 367+ | 6.62 грн |
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Технічний опис WMS08P04TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -8A; Idm: -32A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -8A, Pulsed drain current: -32A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 31mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.