WMS099N10LGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.2A; Idm: 48A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.2A
Pulsed drain current: 48A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 57.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.2A; Idm: 48A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.2A
Pulsed drain current: 48A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 57.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 61.80 грн |
| 11+ | 36.47 грн |
| 25+ | 32.86 грн |
| 35+ | 27.04 грн |
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Технічний опис WMS099N10LGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 8.2A; Idm: 48A; 3W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 8.2A, Pulsed drain current: 48A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 14mΩ, Mounting: SMD, Gate charge: 57.5nC, Kind of package: reel; tape, Kind of channel: enhancement.