WMS09N06TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 36A; 3.1W; SOP8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOP8
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Gate charge: 14.5nC
On-state resistance: 22mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 36A; 3.1W; SOP8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOP8
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Gate charge: 14.5nC
On-state resistance: 22mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 40.34 грн |
| 27+ | 15.06 грн |
| 32+ | 12.51 грн |
| 94+ | 10.04 грн |
| 257+ | 9.48 грн |
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Технічний опис WMS09N06TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 36A; 3.1W; SOP8, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: SOP8, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 9A, Gate charge: 14.5nC, On-state resistance: 22mΩ, Power dissipation: 3.1W, Gate-source voltage: ±20V, Pulsed drain current: 36A.