WMS09P06TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Pulsed drain current: -34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Pulsed drain current: -34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 394 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.48 грн |
| 22+ | 18.89 грн |
| 25+ | 17.06 грн |
| 71+ | 13.31 грн |
| 194+ | 12.59 грн |
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Технічний опис WMS09P06TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -8.5A, Pulsed drain current: -34A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 23mΩ, Mounting: SMD, Gate charge: 59nC, Kind of package: reel; tape, Kind of channel: enhancement.