WMS10DN04TS WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25.8nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 13+ | 37.06 грн |
| 26+ | 16.62 грн |
| 31+ | 13.93 грн |
| 100+ | 13.09 грн |
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Технічний опис WMS10DN04TS WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 15.5mΩ, Mounting: SMD, Gate charge: 25.8nC, Kind of package: reel; tape, Kind of channel: enhancement.