WMS119N10LG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.5A; Idm: 38A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.5A
Pulsed drain current: 38A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.5A; Idm: 38A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.5A
Pulsed drain current: 38A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 60.25 грн |
| 12+ | 33.64 грн |
| 25+ | 30.19 грн |
| 37+ | 24.52 грн |
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Технічний опис WMS119N10LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 11.5A; Idm: 38A; 3W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 11.5A, Pulsed drain current: 38A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 13mΩ, Mounting: SMD, Gate charge: 19.5nC, Kind of package: reel; tape, Kind of channel: enhancement.