WMS12P03T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -45.8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -45.8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.01 грн |
| 30+ | 13.44 грн |
| 36+ | 11.16 грн |
| 100+ | 10.53 грн |
| 107+ | 8.65 грн |
| 293+ | 8.17 грн |
Відгуки про товар
Написати відгук
Технічний опис WMS12P03T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -11.5A, Pulsed drain current: -45.8A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 9.6mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.