WMS13P04T1 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -13A; Idm: -52A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -13A
Pulsed drain current: -52A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -13A; Idm: -52A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -13A
Pulsed drain current: -52A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 31.32 грн |
| 23+ | 17.37 грн |
| 25+ | 15.72 грн |
| 71+ | 12.97 грн |
| 195+ | 12.34 грн |
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Технічний опис WMS13P04T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -13A; Idm: -52A; 3W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -13A, Pulsed drain current: -52A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 13mΩ, Mounting: SMD, Gate charge: 28nC, Kind of package: reel; tape, Kind of channel: enhancement.