WMS140DNV6LG4 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 10A; Idm: 40A; 3.1W; SOP8
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 3.1W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 65V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18mΩ
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.22 грн |
| 23+ | 18.79 грн |
| 28+ | 15.52 грн |
| 100+ | 13.59 грн |
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Технічний опис WMS140DNV6LG4 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 65V; 10A; Idm: 40A; 3.1W; SOP8, Mounting: SMD, Pulsed drain current: 40A, Power dissipation: 3.1W, Gate charge: 14nC, Polarisation: unipolar, Drain current: 10A, Kind of channel: enhancement, Drain-source voltage: 65V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOP8, On-state resistance: 18mΩ.