WMS14DN03T1 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 56A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 56A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 42.06 грн |
| 22+ | 18.81 грн |
| 26+ | 15.70 грн |
| 76+ | 12.35 грн |
| 208+ | 11.72 грн |
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Технічний опис WMS14DN03T1 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 56A; 3W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 14A, Pulsed drain current: 56A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 10.5mΩ, Mounting: SMD, Gate charge: 9.5nC, Kind of package: reel; tape, Kind of channel: enhancement.